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The electron velocity versus electric field (v-E) relationship was measured between 0 and 12 kV/cm at room temperature for a selectively Be-doped In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructure. It was found that the observed electron velocity is greater than that previously measured for an AlGaAs/GaAs/AlGaAs double heterostructure over the enitre range of field investigated. This indicates the superiority of In0.53Ga0.47As as a material for high-speed semiconductor devices. The experimental results were also compared with those of the Monte Carlo calculation, and a remarkable discrepancy between the experiment and the calculation was found above the threshold field.
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Shigekawa et al. (1990) studied this question.
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