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The semiclassical high-field hydrodynamic transport equations, comprising the first three moments of the Boltzmann transport equation in the relaxation time approximation, are used to model the AlGaAs/GaAs heterojunction bipolar transistor. The transport equations are solved simultaneously in one dimension and in the steady state within a single-valley band-structure scheme. The device characteristics of graded Al profiles in the emitter-base and base regions are numerically evaluated.>
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E.M. Azoff (1989) studied this question.
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