Annealing behavior of In implanted in Si studied by perturbed angular correlation

The perturbed angular correlation technique has been used to study the local environment of 111In implanted to low doses at room temperature into Si as a function of postimplantation annealing temperature. At annealing temperatures corresponding to those where previous electrical measurements have observed reverse annealing behavior, we find evidence for the displacement of In to regions of lattice disorder. This is in contrast to results of ion-beam channeling experiments on heavy group-III impurities in Si which have been interpreted to indicate the displacement of the impurity to a unique regular tetrahedral interstitial site.