Flash lamp annealing of ion implanted Si layers is investigated by Rutherford backscattering, sheet resistivity measurements, and transmission electron microscopy. Silicon substrates, 〈100〉-orientation, are implanted with As ions (100 keV, 1015/cm2). The energy density of the light pulses is varied between 50 and 85 J/cm2 and the pulse length was 10 ms (heat radiation annealing regime). It is found that the annealing regime is effective in recrystallization of amorphous Si layers and that residual defects in form of dislocation loops remain.
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Klabes et al. (1981) studied this question.
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