Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip

Optical waveguides, photodetectors, and VLSI CMOS circuits are integrated monolithically in different ways: in a combined integration technique the light-guiding film is deposited and covered with a SiO/sub 2/ layer replacing standard PSG as the dielectric insulation of polysilicon and metallization. In a stacked method the waveguide fabrication starts after metallization and test of the CMOS circuits. Electrooptical coupling is performed by butt-, leaky wave-, or, mirror-coupling of waveguides and photodetectors. To fabricate the system, SWAMI LOCOS technique is applied for monolithic integration of both, integrated optical devices, and microelectronic circuits. This paper discusses the integration technology and the results of static and dynamic measurements.>