Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1968IEEE Transactions on Electron Devices

Some measurements of the steady-state and transient characteristics of high-field dipole domains in GaAs

View Full Paper
Ask AI
Bookmark
Share

Authors

IKIsamu KuruToshiba (Japan)PRP.N. RobsonUniversity of StrathclydeGKG. S. KinoCenter for Nanoscale Science and Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Kuru et al. (1968) studied this question.

synapsesocial.com/papers/6a85cbddcf8e1b2ff031a8b5https://doi.org/10.1109/t-ed.1968.16131
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE1967 · 197 citations
  2. 2Effect of Domain and Circuit Properties on Oscillations in GaAs1966 · 33 citations
  3. 3High-efficiency operation of a Gunn oscillator in the domain mode1969 · 33 citations
  4. 4The Gunn effect in polar semiconductors1966 · 69 citations
  5. 5Specific Negative Resistance in Solids1963 · 561 citations