The Enhanced Diffusion of Low-Concentration Phosphorus, Arsenic and Boron in Silicon during IR-Heating

The diffusion of P, As and B in silicon during IR-heating has been investigated quantitatively under low-concentration conditions. A spin-on source was used for the diffusion of the dopants. The diffusion coefficient was determined by fitting the measured concentration profile to the complementary error function. Enhanced diffusion was obtained for these three impurities. The degree of the enhancement became larger in the order of As, P and B. The cause of the enhancement was found to be the generation of excess self-interstitials during IR-heating.