AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator, Ochiai, Masaru, Akita, Mitsutoshi, Ohno, Yutaka, Kishimoto, Shigeru, Maezawa, Kouichi, Mizutani, Takashi
No takes yet. Share an insight, caveat, or question.
Akita et al. (2003) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: