Comparison of silicon dioxide layers grown from three polymethylsiloxane precursors in a high-density oxygen plasma

We have compared the elemental composition, growth rates, and hardness of silicon dioxide layers grown from hexamethyldisiloxane (HMDSO), octamethylcyclotetrasiloxane (OMCTS), and tetramethylcyclotetrasiloxane (TMCTS) in a high-density electron cyclotron resonance oxygen plasma. Hard colorless coatings could be grown from each precursor; coating composition, growth rates, and hardness depended strongly on the ratio of oxygen to precursor flow. At the highest O2/precursor flow ratios (4:1 for HMDSO and 8:1 for OMCTS and TMCTS), the coatings were SiO2-like with oxygen-to-silicon ratios close to 2:1 and carbon percentages as low as 12% for HMDSO, 3.4% for OMCTS, and 1.4% for TMCTS. Growth rates were 0.7–1.1 μm/min, initially increasing with the O2/precursor flow ratio; final coating thicknesses after 5 min were 3.5 μm to 5.5 μm. Coating hardness values generally increased with increasing O2/precursor flow ratio, attaining 6 GPa, 7.4 GPa, and 8.7 GPa for HMDSO, OMCTS, and TMCTS, respectively.