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It is shown that the enhanced transconductance observed in deep submicrometer MOSFETs at 77 and 300 K can be modeled using an extended drift-diffusion approximation with mobility parameters taken from measurements on MOSFETs of the 4-Mb DRAM generation. For the terminal characteristics of these devices, velocity overshoot is of little importance for devices with channel lengths larger than 60 nm.>
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Hänsch et al. (1989) studied this question.
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