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August 6, 2004Japanese Journal of Applied PhysicsOpen Access

Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

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Authors

MHMasataka HigashiwakiOsaka Prefecture UniversityTMToshiaki MatsuiKyoto University

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Higashiwaki et al. (2004) studied this question.

synapsesocial.com/papers/6a8916903d6e0fcd7a28becbhttps://doi.org/10.1143/jjap.43.l1147
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