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April 1, 1983IEEE Transactions on Nuclear Science

The Top Silicon Layer of SOI Formed by Oxygen Ion Implantation

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Authors

RPRussell F. PinizzottoMerrimack CollegeBVB. L. VaandragerSandia National LaboratoriesSMS. MattesonUniversity of North Carolina at Chapel Hill

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Pinizzotto et al. (1983) studied this question.

synapsesocial.com/papers/6a8917dc544bae4dd6a2a028https://doi.org/10.1109/tns.1983.4332623
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  1. 1C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into silicon1978 · 539 citations
  2. 2Advances in Transmission Electron Microscope Techniques Applied to Device Failure Analysis1980 · 81 citations
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  5. 5A study of silicon oxides prepared by oxygen implantation into silicon1977 · 56 citations