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August 22, 1994Applied Physics Letters

GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique

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CWChristian WetzelRensselaer Polytechnic InstituteDVD. VolmTechnical University of MunichBMB. K. MeyerFriedrich-Alexander-Universität Erlangen-Nürnberg

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Wetzel et al. (1994) studied this question.

synapsesocial.com/papers/6a893f6d40fe6a3effcafb25https://doi.org/10.1063/1.112143
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