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The oxidation kinetics of Si in oxygen rf plasma in a planar reactor is investigated. It is found that the dependence of the oxide layer thickness on oxidation time is characterized by a rapid initial region described by the Mott-Cabrera law, followed by a linear region. The influence of glow discharge parameters on the oxidation process is investigated. It is concluded that the active oxidizing particle is elemental oxygen.
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Atanasova et al. (1981) studied this question.
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