The adsorption of anhydrous hydrogen fluoride (AHF) on the surfaces of silicon native oxide was investigated by in situ X-ray photoelectron spectroscopy (XPS) in order to understand the reaction between HF and the oxide films at room temperature. A significant amount of the component is located at 670.0 eV binding energy in the observed XPS spectra, and is most likely derived from HF molecules. Moreover, the surface density of F-Si bonds slowly increases with the AHF exposure. We also attempted to accelerate the etching of the native oxide without moisture, supplying the AHF gas with remote-plasma-excited Ar, and obtained the enhanced etch rate.
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Saito et al. (1997) studied this question.
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