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November 23, 1998Applied Physics Letters

Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire

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Authors

YGYuval GolanBen-Gurion University of the NegevXWX. H. WuYunnan University
James S. Speck
James S. SpeckLinköping University

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Golan et al. (1998) studied this question.

synapsesocial.com/papers/6a9037946bfd95d7bd4dd04bhttps://doi.org/10.1063/1.122682
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Also Consider

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  1. 1Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer1992 · 227 citations
  2. 2Electronic and structural properties of GaN grown by hydride vapor phase epitaxy1996 · 74 citations
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  4. 4The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition1998 · 106 citations
  5. 5Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition1996 · 98 citations