Long stripe shaped large grains 0.1–10 mm in length and up to 10 µm in width are grown in poly-Si films on a SiN layer by scanning electron beam annealing. Twin boundaries exist in the grains along the crystal stretching direction. Preannealing at 1000°C for 1 h in N2 has a good effect on the grain growth feature. A model is proposed for the explanation of the long rectangular crystal growth. Characteristics of n-MOSFET's fabricated in electron beam recrystallized poly-Si film are investigated. Threshold voltage, maximum surface mobility, and leakage current were 2.5 V, 250 cm2/V·sec, and 10-10 A, respectively.
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Shibata et al. (1982) studied this question.
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