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A new germanium precursor, ethylmethylaminogermane (H3Ge‐N(CH3)(C2H5), was synthesized and characterized. The new Ge precursor has high vapor pressure and stability, which were measured by a home‐made apparatus and thermogravimetric analysis, respectively. The Ge NWs, islands, films, or mixed structures on Si and Au substrates were obtained by CVD in the temperature range 300‐400 °C and pressure range 67–267 Pa.
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Kang et al. (2009) studied this question.
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