A cross-sectional transmission electron microscope (XTEM) study of solid phase epitaxial growth in BF+2 -implanted (001)Si has been carried out. It is demonstrated that XTEM is unique in providing accurate, high-resolution data on the regrowth of implantation-amorphous layer. The activation energy for the regrowth was measured to be 3.0±0.1 eV. Uncertainties in the XTEM measurements of solid phase regrowth rate are discussed.
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Nieh et al. (1986) studied this question.
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