Answers are grounded in this paper and cite their sources.
The first demonstration of a type-II InP/GaAsSb double heterojunction bipolar transistor (DHBT) with a compositionally graded InGaAsSb to GaAsSb base layer is presented. A device with a 0.4×6 μm2emitter dimensions achieves peak fTof 475 GHz (fmax=265 GHz) with current density at peak fTexceeding 12 mA/μm2. The structure consists of a 25-nm InGaAsSb/GaAsSb graded base layer and 65-nm InP collector grown by MBE with breakdown voltage /spl sim/4 V which demonstrates the vertical scaling versus breakdown advantage over type-I DHBTs.
No takes yet. Share an insight, caveat, or question.
Snodgrass et al. (2006) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: