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February 20, 1996Microwave and Optical Technology LettersOpen Access

1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

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Authors

TET. EnokiNTT (Japan)HIHiroshi ItôNEC (Japan)KIKenji IkutaKanazawa University

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Enoki et al. (1996) studied this question.

synapsesocial.com/papers/6a9163d2a746da0776b39da2https://doi.org/10.1002/(sici)1098-2760(19960220)11:3<135::aid-mop7>3.0.co;2-m
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  2. 20.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects1994 · 117 citations
  3. 3A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer1992 · 30 citations