Hot-electron diffusion noise in n-silicon using a radiometric method in the X-band region

A radiometric method for the measurement of the diffusion noise in homogeneous semiconductors is presented. The work has been carried out on epitaxies silicon n+n n+ at room temperature, the electric field applied (1⩽E⩽70 kV/cm) being along the 〈111〉 direction. The results are in close agreement with those computed through the impedance field method with the high field diffusion coefficient values obtained by Canali who had used the time-of-flight technique.