Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs

The generation of defect states in p-MOSFETs under negative bias temperature instability (NBTI) has been extensively discussed in previous literature. However, only a few studies have discussed the relationship between interface defects andoff-state leakage. Therefore, this article analyzes the impact of interface defects generated by NBTI on gate-induced drain leakage (GIDL). In general, GIDL is generated through band-to-band tunneling (BTBT) at large gate-to-drain bias (VGD). In this article, NBTI causes an increase in GIDL at extremely lowVGD. By measuring at different temperatures and comparing the GIDL generated from hot carrier degradation (HCD), it was confirmed that the GIDL would still be generated through trap-assisted tunneling (TAT) and thermal excitation at an extremely lowVGD.