Generic analytical expressions useful for the modeling of the MOSFET operation as a function of gate and drain biases are presented. Both, the linear and the non-ohmic regimes of operation are analyzed. Analytical expressions for the drain current, the transconductance, the output conductance, the noise spectral density, and the current fluctuation intensity are provided not only for room temperature but also for the liquid helium temperature range where a specific mobility law is required.
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G. Ghibaudo (1989) studied this question.
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