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The total dose response of Si/SiO/sub 2/ structures with ultrathin (20-40 /spl Aring/) thermal oxide layers grown porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states.
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Cantin et al. (1998) studied this question.
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