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Samples of the Texas Instruments TMS4060JL, 4096 bit dynamic random-access memory (4K RAM) were tested in the ionizing environment of a /sup 137/Ce source. Irradiated in an active condition, the devices were observed to fail at 1 x 10/sup 3/ rads (Si). Twenty-four hours after irradiation, 4 of the 5 devices tested were again functional. The devices were not powered and were at room temperature during the 24 hour anneal period.
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Coleman et al. (1976) studied this question.
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