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A shift in the gate threshold voltage of 7 to 9 times its initial value after irradiation with 2 to 6 x 1012 electrons/cm2 of 1.5 Mev electrons is observed for a p-channel enhancement type MOSFET. The effect has only been observed at gate biases greater than -20 V.
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Newman et al. (1967) studied this question.
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