Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory

Epitaxial thin film growth of SrBi2Ta2O9/SrTiO3/Ce0.12Zr0.88O2 on Si was studied, and this epitaxial layer structure was applied to fabrication of ferroelectric-gate field effect transistors (FETs). The films were prepared by a pulsed laser deposition technique and epitaxial growth was identified by x-ray diffraction. The devices exhibited excellent electrical performances: Capacitance-voltage characteristic of a metal-ferroelectric-insulator-semiconductor (MFIS) diode showed a retention longer than 10 days and Id-Vg characteristic of an MFIS-FET showed 1 day retention. It is proved that the crystalline quality of ferroelectric thin films is of great importance to develop integrated devices with high performance.