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The electrical characteristics of thin (10 nm) MOS gate dielectrics formed at 850 degrees C by low-pressure furnace nitridation of SiO/sub 2/ followed by an oxygen anneal (reoxidation) are described. The ROXNOX process is demonstrated to be readily scalable from 950 degrees C to 850 degrees C through the use of higher partial pressures in the nitridation and reoxidation steps, resulting in the same quality dielectric formed with a lower D/sub t/ product. Electrical characterization results of capacitors and transistors with the 850 degrees C ROXNOX dielectric are presented. Reliability of the 850 degrees C ROXNOX dielectric is demonstrated through Fowler-Nordheim and channel hot-electron stressing results.>
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Groß et al. (1991) studied this question.
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