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Capacitance-voltage (C-V) profiles are calculated self-consistently for δ-doped GaAs(Si) at kT=25 meV. Existing experimental data can only be explained if charge transfer to the DX center, which acts as an electron trap in the conduction band, is included. The depth resolution of C-V measurements is strongly enhanced when the DX center is occupied.
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A. Zrenner (1989) studied this question.
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