Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer1986 · 2,208 citations
2. 2Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition1998 · 81 citations
3. 3Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN1998 · 192 citations
4. 4Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy1997 · 930 citations
5. 5Optical Properties of Strained AlGaN and GaInN on GaN1997 · 337 citations