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The effect of hydrogen implantation on theI(V)characteristics of lateral polysilicon p-n junctions is reported. After implantation with hydrogen and annealing at 400°C, a moderate decrease in the forward current and a large decrease in the reverse current is observed. In addition, the reverse breakdown voltage is increased. Best results were obtained for hydrogen dose of 1016cm-2. The measurements are explained by considering both electric field enhancement of emission and capture rates and the generation of new trap levels by ion implantation.
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Chen et al. (1986) studied this question.
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