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A simple analysis is presented of the effect of illumination on MIS capacitance in the strong inversion region. The two mechanisms responsible for the increase of capacitance under illumination are described: the decrease of the time constant generation of the inversion layer, and the decrease of the space-charge region under illumination. The theoretical results are compared with the experimental data on silicon and tellurium MIS capacitances.
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Grosvalet et al. (1967) studied this question.
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