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CuInS2 is a good candidate material for high efficiency absorber layers in thin film solar cells. In this work, spray CVD is used for the first time to deposit this promising material. Using a single-source precursor, stoichiometric films with little carbon or phosphorus contamination are obtained, and although film microstructure and orientations are quite sensitive to deposition parameters, such as substrate and flow rates, dense columnar growth and faceted crystalline features are produced.
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Hollingsworth et al. (1999) studied this question.
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