Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 13, 2003Applied Physics Letters

Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy

View Full Paper
Ask AI
Bookmark
Share

Authors

OMOleg MitrofanovUniversity College LondonMMMichael J. ManfraPurdue University West LafayetteNWNils WeimannUniversity of Duisburg-Essen

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Mitrofanov et al. (2003) studied this question.

synapsesocial.com/papers/6a9780f255a55e94cce337c7https://doi.org/10.1063/1.1582373
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs2002 · 34 citations
  2. 2Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs2001 · 157 citations
  3. 3GaN/AlGaN HEMTs operating at 20 GHz withcontinuous-wave power density > 6 W/mm2001 · 69 citations
  4. 4The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs2000 · 741 citations
  5. 5MBE growth of AlGaN/GaN HEMTs with high power density2002 · 34 citations