Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(0338)

The interface properties of SiO2/4H-SiC(033̄8) were characterized using n-type metaloxide-semiconductor structures fabricated by wet oxidation. The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements at a low temperature and room temperature. 4H-SiC(033̄8) was found to have different energy distribution of the interface state density from the (0001) face. The shallow interface state density on (033̄8) is lower than on (0001) by a factor of 4 to 8.