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May 1, 1990IEEE Electron Device Letters

Confined lateral selective epitaxial growth of silicon for device fabrication

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PSPeter J. SchubertIndiana University BloomingtonGNG.W. NeudeckPurdue University West Lafayette

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Schubert et al. (1990) studied this question.

synapsesocial.com/papers/6a98124bb677aa8bf5c60db6https://doi.org/10.1109/55.55243
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