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The photoluminescence at 10K in HB- and LEC-grown GaAs:V has been studied in the spectral range 0.7-1.52 eV. In n-type HB-grown samples the increase of V concentration hinders the formation of donor-Ga-vacancy complexes. In V-compensated semi-insulating LEC samples, in addition to the well known PL band, which is due to V Ga 3+ (3d 2 ) centre, a broad band at 0.8 eV has been found to be V-related. It probably indicates the presence of a second acceptor-type centre, which should be responsible for the compensation in V-doped gallium arsenide.
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Gladkov et al. (1985) studied this question.
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