Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water

HfO2 films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt2)4 and H2O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slower at 250 °C and ceased at 350 °C. The films possessed an O:Hf ratio of 2.15 ± 0.12, as determined by ion beam analysis. The films were weakly crystallized, showing X‐ray diffraction (XRD) peaks characteristic of monoclinic phase. The refractive index of the films varied between 1.93 and 1.96. The effective permittivities of the dielectric layers in Al/HfO2/n‐Si(100) capacitor structures were close to 10.