1900 V, 1.6 mΩ cm2AlN/GaN-on-Si power devices realized by local substrate removal

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal–organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 µm. A fully scalable local substrate removal technique was developed to dramatically enhance the off-state breakdown voltage of the transistors. The three-terminal breakdown voltage of these devices using a gate–drain distance of 15 µm increased significantly, from 750 V to 1.9 kV, after local substrate removal. The high two-dimensional electron gas carrier density (2.3 × 10 13 cm −2 ) associated with the low sheet resistance enables a record combination of a specific on-resistance (1.6 mΩ cm 2 ) and high breakdown voltage for GaN-on-Si transistors.