Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

Neodymium-doped aluminum (Al-Nd) was used as a gate electrode and was anodized, forming a layer of Nd:Al2O3as the dielectric for indium-zinc oxide (IZO) thin-film transistors (TFTs). The Nd:Al2O3showed high capacitance (110 nF/cm2), high breakdown field (>;6 MV/cm), and low leakage current (-7A/cm2at 2.0 MV/cm) without hillocks when annealed at 300°C. The TFT showed a low operating voltage of 3 V, a low off current of ~10-13A, a high mobility of 13.7 cm2· V-1· s-1, and excellent electrical stability because of the good interface coupling between Nd:Al2O3and IZO, resulting from the low electronegativities of Al and Nd.