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March 12, 2012Applied Physics Letters

Gate metal induced reduction of surface donor states of AlGaN/GaN heterostructure on Si-substrate investigated by electroreflectance spectroscopy

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Authors

JSJong Hoon ShinSeoul National UniversityYJYoung Je JoHallym University Dongtan Sacred Heart HospitalKKKwang-Choong Kim

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Shin et al. (2012) studied this question.

synapsesocial.com/papers/6a9ec2ccb4a07363584547f9https://doi.org/10.1063/1.3695056
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Polarization Field Determination in AlGaN/GaN HFETs1999 · 10 citations
  2. 2Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors2000 · 1,116 citations
  3. 3Determination of the polarization discontinuity at the AlGaN∕GaN interface by electroreflectance spectroscopy2005 · 30 citations
  4. 4Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors2003 · 207 citations
  5. 5Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures1999 · 3,020 citations