Device physics of integrated injection logic

After a brief review of relevant device parameters, characterizing the inversely operating multicollector n-p-n transistor and the lateral p-n-p transistor which make up anI²Lbasic cell, some electronic circuit properties of this gate are discussed quantitively. Analytic expressions are derived for the transfer characteristics, the noise margin and the propagation delay time per gate in relation to the cell geometry, fan-out, doping profiles, and recombination properties. These expressions are compared with experimental and numerical circuit simulation results.