This paper discusses about the processing and electrical characteristics of sub-100 nm Strontium Bismuth Tantalate (SBT) films for low voltage and high-density FeRAM applications. Electrical data is reported for films as thin as 48-nm with polarization charge in the range of 13–15 μC/sq.cm. Saturation voltages of less than 1 V was measured with negligible fatigue and good leakage properties. The breakdown field was ∼IMV/cm. The maximum processing temperature reported in this study is 700°C with optimized SBT stoichiometry and process conditions.
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Narayan et al. (1999) studied this question.
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