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January 1, 1988Surface ScienceOpen Access

A reassessment of electron escape depths in silicon and thermally grown silicon dioxide thin films

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Authors

MHMichael F. HochellaUniversity of Notre DameACA. H. CarimNXP (Netherlands)

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Hochella et al. (1988) studied this question.

synapsesocial.com/papers/6aa1f659e308734d7dd307c2https://doi.org/10.1016/0039-6028(88)90625-5
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