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The density of interface statesDitin metal-gate/high-kdielectric MOSFETs is investigated in weak inversion from small-signal capacitance and conductance measurements using a transmission-line model. A presence of both, a largeDit, and a high channel resistance, i.e., the latter exacerbated by poor effective mobility, are demonstrated in capacitance-voltage (CV) characteristics by a comparison of experiments with simulations using a Schrodinger-Poisson solver. Using a transmission-line network, the channel response and the density of interface states can be accurately modeled from the conductance-frequency characteristics. This technique is applied to HfO2/SiO2dielectric MOSFETs with polysilicon and poly/TiN metal gates deposited and annealed at identical temperature. In such a condition, the density of interface states is twice as large as for a TiN metal gate.
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Sicre et al. (2012) studied this question.
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