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April 27, 2018IEEE Transactions on Electron DevicesOpen Access

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

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Authors

LSLuca SayadiInfineon Technologies (Austria)GIGiuseppe IannacconeUniversity of PisaSSSébastien SicreInfineon Technologies (Austria)

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Sayadi et al. (2018) studied this question.

synapsesocial.com/papers/6aa3a70baaaedccdac749695https://doi.org/10.1109/ted.2018.2828702
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