Gaussian-Based Analytical Model for Temperature-Dependent I-V Characteristics of GaN HEMTs

In this paper, an analytical temperature-dependent I-V model of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) is established by using the Gaussian function. Compared with Curtice, Angelov, and their improved models in the literature, the I-V model proposed in this paper has the characteristics of high modeling accuracy and fast modeling speed. For example, the 3rd order (Gm3) derivative modeling accuracy of the modified Curtice at -45∘, 75∘, and 175∘ is 13.81%, 12.09%, and 6.44%, respectively, while at the same temperature, the Gm3 modeling accuracy of the proposed I-V model is 0.77%, 0.52%, and 1.04%, respectively.