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September 23, 2014IEEE Transactions on Electron Devices

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

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TCTing-Fu ChangTaiwan Semiconductor Manufacturing Company (Taiwan)THTsung-Chieh HsiaoNational Tsing Hua UniversityCHChih‐Fang HuangNational Tsing Hua University

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Chang et al. (2014) studied this question.

synapsesocial.com/papers/6aa440ef60384f9abab735d1https://doi.org/10.1109/ted.2014.2352276
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