Answers are grounded in this paper and cite their sources.
A new equation, which does not require any fitting parameters, has been developed to predict gate leakage current density in MOSFETs. The equation is based upon a non-Maxwellian hot-electron distribution function derived from the Boltzmann transport equation, and utilizes a physically calculated local electron temperature. The model predicts gate currents for a sample submicron MOSFET that are in good agreement with experiment.
No takes yet. Share an insight, caveat, or question.
Goldsman et al. (1988) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: